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  EMB53 complex digital transistors (bias resistor built-in transistors) datasheet l l outline parameter dtr1 and dtr2 emt6 v ceo -50 v i c -100 ma r 1 4.7 k EMB53 (sc-107c) l l features l l inner circuit 1) two dta043t chips in a emt6 package. 2) transister elements are independent, eliminating interface. 3) mounting cost and area can be cut in half. 4) lead free/rohs compliant. l l application switching circuit, inverter circuit, interface circuit, driver circuit l l packaging specifications part no. package package size taping code reel size (mm) tape width (mm) basic ordering unit.(pcs) marking EMB53 emt6 1616 t2r 180 8 8000 b53 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 1/4 20131001 - rev. 003
EMB53 datasheet   absolute maximum ratings (t a = 25c) parameter symbol values unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -100 ma power dissipation p d *1 *2 150 mw junction temperature t j 150 range of storage temperature t stg -55 to + 150   electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. collector-base breakdown voltage bv cbo i c = -50 a -50 - - v collector-emitter breakdown voltage bv ceo i c = -1 ma -50 - - v emitter-base breakdown voltage bv ebo i e = -50 a -5 - - v collector cut-off current i cbo v cb = -50 v - - -0.5 a emitter cut-off current i ebo v eb = -4 v - - -0.5 a collector-emitter saturation voltage v ce(sat) i c = -5 ma, i b = -0.5 ma - -0.07 -0.15 v dc current gain h fe v ce = -10 v, i c = -5 ma 100 - 600 - input resistance r 1 - 3.29 4.7 6.11 k transition frequency f t *3 v ce = -10 v, i e = -10 v, f = 100 mhz - 250 - mhz *1 terminal mounted on a reference footprint. *2 120mw per element must not be exceeded. *3 characteristics of built-in transistor. www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 2/4 20131001 - rev. 003
EMB53          datasheet   electrical characteristic curves(t a =25c) fig.1 grounded emitter propagation characteristics fig.2 grounded emitter output characteristics fig.3 dc current gain vs. collector current fig.4 collector-emitter saturation voltage vs. collector current                                               www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 3/4 20131001 - rev. 003
EMB53               datasheet   dimensions                                               www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 4/4 20131001 - rev. 003


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